Gate leakage reduction mechanism of AlGaN/GaN MIS-HFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2479-2482

  Kikuta, Daigo ^a   Takaki, Ryohei ^a   Matsuda, Junya ^a   Okada, Masaya ^a   Wei, Xin ^a   Ao, Jin Ping ^a   Ohno, Yasuo ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

AlGaN; GaN; Gate insulator; Gate leakage; HFET; MIS HFET

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GALLIUM NITRIDE; HETEROJUNCTIONS; MIS DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMIONIC EMISSION; TRANSCONDUCTANCE;

GATE INSULATORS; GATE LEAKAGE; HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR (HFET); MIS-HFET;

FIELD EFFECT TRANSISTORS;

EID: 21244461512     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2479     Document Type: Conference Paper

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