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Volumn 249, Issue 1-4, 2005, Pages 23-30

Influence of the morphology of ferroelectric SrBi 2 Ta 2 O 9 thin films deposited by metal organic decomposition on its electrical characteristics

Author keywords

Ferroelectric; Hysteresis; Leakage current; Morphology; Phase transformation; SBT

Indexed keywords

ATOMIC FORCE MICROSCOPY; FERROELECTRIC MATERIALS; HYSTERESIS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHASE TRANSITIONS; STRONTIUM COMPOUNDS; SURFACE ROUGHNESS; X RAY DIFFRACTION;

EID: 21244457609     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.11.012     Document Type: Article
Times cited : (17)

References (28)
  • 27
    • 0000454620 scopus 로고    scopus 로고
    • Gate dielectrics and MOS ULSIs
    • I.P. Kaminow W. Engl T. Sugano Springer Verlag Berlin, Heidelberg
    • T. Hori Gate dielectrics and MOS ULSIs I.P. Kaminow W. Engl T. Sugano Springer Series in Electronics and Photonics 1997 Springer Verlag Berlin, Heidelberg 174
    • (1997) Springer Series in Electronics and Photonics , pp. 174
    • Hori, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.