Crystallization process of Sr0.7Bi2.3Ta2O9 thin films with different crystal orientation prepared by chemical liquid deposition using alkoxide precursor

IEICE Transactions on Electronics

Volumn E81-C, Issue 4, 1998, Pages 552-558

  Koiwa, Ichiro ^a   Kanehara, Takao ^a   Mita, Juro ^a   Osaka, Tetsuya ^a   Ono, Sachiko ^a   Sakakibara, Akira ^a   Seki, Tomonori ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

Alkoxide precursor; Crystallization process; Ferroelectric memory; Srbi2ta2o9 thin film

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLIZATION; FERROELECTRIC MATERIALS; FILM PREPARATION; SPUTTER DEPOSITION; STRONTIUM COMPOUNDS;

ALKOXIDE PRECURSORS; CHEMICAL LIQUID DEPOSITION;

THIN FILMS;

EID: 0032047048     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (15)

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