Laser doping for microelectronics and microtechnology

Applied Surface Science

Volumn 247, Issue 1-4, 2005, Pages 537-544

  Sarnet, Thierry ^a   Kerrien, Gurwan ^a   Yaakoubi, Nourdin ^a   Bosseboeuf, Alain ^a   Dufour Gergam, Elisabeth ^a   Débarre, Dominique ^a   Boulmer, Jacques ^a   Kakushima, Kuniyuki ^b   Laviron, Cyrille ^c   Hernandez, Miguel ^d   Venturini, Julien ^d   Bourouina, Tarik ^e  

^a UNIV PARIS SUD   (France)

^b UNIVERSITY OF TOKYO   (Japan)

^c CEA LETI   (France)

^d SOPRA   (France)

^e ESIEE PARIS   (France)

Author keywords

GILD; Implantation; Laser doping; LTP; MEMS; Microresonator; Nanoresonator; Ultra shallow junctions

Indexed keywords

ANNEALING; CHEMISORPTION; CMOS INTEGRATED CIRCUITS; CONCENTRATION (PROCESS); CRYSTALLINE MATERIALS; DOPING (ADDITIVES); EPITAXIAL GROWTH; LASER BEAMS; MICROELECTROMECHANICAL DEVICES; SEMICONDUCTOR MATERIALS; SILICON;

GILD; IMPLANTATION; LASER DOPING; NANORESONATORS; ULTRASHALLOW JUNCTIONS;

MICROELECTRONICS;

EID: 21144447282     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.01.172     Document Type: Article

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