Fabrication of heavily boron doped mechanical resonators

TRANSDUCERS 2003 - 12th International Conference on Solid-State Sensors, Actuators and Microsystems, Digest of Technical Papers

Volumn 1, Issue , 2003, Pages 328-331

  Kakushima, K ^a   Sarnet, T ^b   Kerrien, G ^b   Nagashio, M ^c   Debarre, D ^b   Boulmer, J ^b   Noguchi, T ^b   Bourouina, T ^d   Kawakatsu, H ^a   Fujita, H ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIV PARIS SUD   (France)

^c TOKYO DENKI UNIVERSITY   (Japan)

^d Ecole Superieure d'Igenieurs en Electrotechnique et Electronique   (France)

Author keywords

Boron; Bridges; Doping; Gas lasers; Optical device fabrication; Resonance; Resonant frequency; Silicon; Stress control; Tensile stress

Indexed keywords

ACTUATORS; BORON; BRIDGES; DOPING (ADDITIVES); FABRICATION; GAS LASERS; MICROSYSTEMS; NATURAL FREQUENCIES; RESONANCE; SILICON; TENSILE STRESS; TRANSDUCERS;

BORON-DOPED; MECHANICAL RESONATORS; OPTICAL DEVICE FABRICATION; SINGLE CRYSTALLINE SILICON; STRESS CONTROL; STRESS FREE; XECL LASER;

SOLID-STATE SENSORS;

EID: 33847016672     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SENSOR.2003.1215319     Document Type: Conference Paper

References (4)

1. C.Huang, et al., "Fabrication of ultrathin p++ Silicon Microstructures Using Ion Implantation and Boron Etch-Stop", Journal of MEMS, Vol.10, No.4(2001), pp.532-537
2. E.H.Yang and S.S.Yang, "A technique for quantitative deterination of the profile of the residual stress along the depth of p+ silicon films", Appl. Phys. Lett., Vol.67, No.7(1995), pp.912-914
3. G.Kerrien, et al., "Ultra-shallow, super-doped and box-like junctions realized by laser-induced doping", Appl. Surf. Sci., 186 (2002), pp.45-51
4. A.Vailionis, et al., "Electrically Active and Inactive B Lattice Sites in Ultrahighly B Doped Si(001): An X-Ray Near-Edge Absorption Fine-Structure and High-Resolution Diffraction Study", Phy. Rev. Lett., Vol.82, No.22(1999), pp4464-4467