Laser doping for ultra-shallow junctions monitored by time resolved optical measurements

IEICE Transactions on Electronics

Volumn E85-C, Issue 5, 2002, Pages 1098-1103

  Débarre, Dominique ^a   Kerrien, Gurwan ^a   Noguchi, Takashi ^a   Boulmer, Jacques ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

Chemisorption; GILD; Laser doping; Transient reflectivity; Ultra shallow junction

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMISORPTION; DENSITY (OPTICAL); ELECTRIC RESISTANCE; LASER APPLICATIONS; LASER PULSES; LIGHT REFLECTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING;

DOPANT CONCENTRATION; ENERGY DENSITY; FOUR POINT PROBE METHOD; GAS IMMERSION LASER DOPING; LASER PULSE ENERGY; TRANSIENT REFLECTIVITY; ULTRA-SHALLOW JUNCTION;

SEMICONDUCTOR JUNCTIONS;

EID: 0036579147     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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