Influence of annealing temperature and environment on the properties of indium tin oxide thin films

Journal of Physics D: Applied Physics

Volumn 38, Issue 12, 2005, Pages 2000-2005

  Wang, R X ^a   Beling, C D ^a   Fung, S ^a   Djurisic A B ^a   Ling, C C ^a   Kwong, C ^a   Li, S ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; DEPOSITION; ELECTRON BEAMS; EVAPORATION; GLASS; HYDROGEN; INDIUM COMPOUNDS; NITROGEN; OPTICAL PROPERTIES; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL STATE; DEPOSITION RATE; ELECTRON-BEAM EVAPORATION; INDIUM TIN OXIDES (ITO);

THIN FILMS;

EID: 21144434053     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/38/12/022     Document Type: Article

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