Work function of ITO substrates and band-offsets at the TPD/ITO interface determined by photoelectron spectroscopy

Synthetic Metals

Volumn 111, Issue , 2000, Pages 315-319

  Chkoda, L ^a   Heske, C ^a   Sokolowski, M ^a   Umbach, E ^a   Steuber, F ^b   Staudigel, J ^b   Stoßel M ^b   Simmerer, J ^b  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; FERMI LEVEL; INTERFACES (MATERIALS); LIGHT EMITTING DIODES; ORGANIC SOLVENTS; OXYGEN; PHOTOELECTRON SPECTROSCOPY; REACTIVE ION ETCHING; SPUTTERING; SUBSTRATES; SURFACE STRUCTURE; VACUUM;

BAND OFFSETS; HIGHEST OCCUPIED MOLECULAR ORBITAL; HOLE INJECTION; INDIUM TIN OXIDE; VACUUM POTENTIAL; WORK FUNCTIONS;

INDIUM COMPOUNDS;

EID: 0033688343     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0379-6779(99)00355-0     Document Type: Article

References (10)

1. Ishii H., Seki K. IEEE Trans. Electron Devices. 44:1997;1295.
2. Hölzl J., Schulte F.K. Springer Tracts in Modern Physics. 85:1979;116 Springer-Verlag, Berlin.
3. Cartier E., Pfluger P., Piraux J.J., Rei Vilar M. Appl. Phys. A. 44:1987;43.
4. Ishida T., Kobayashi H., Nakato Y. J. Appl. Phys. 73:1993;4344.
5. Park Y., Choong V., Gao Y., Hsieh B.R., Tang C.W. Appl. Phys. Lett. 68:1996;2699.
6. Sugiyama K., Seki K., Ito E., Ouchi Y., Ishii H. Proc. MRS Fall-Meeting, Boston. J3:1997;58.
7. Schlaf R., Parkinson B.A., Lee P.A., Nesbesny K.W., Armstrong N.R. Appl. Phys. Lett. 73:1998;1026.
8. Sugiyama K., Yoshimura D., Miyamae T., Miyazaki T., Ishii H., Ouchi Y., Seki K. J. Appl. Phys. 83:1998;4928.
9. Umbach E. Surf. Sci. 117:1982;482.
10. Wu C.C., Wu C.I., Sturm C., Kahn A. Appl. Phys. Lett. 70:1997;1348.