Gain limitations of scaled InP/InGaAs heterojunction bipolar transistors

Journal of Applied Physics

Volumn 89, Issue 11 I, 2001, Pages 6444-6448

  Rohner, M ^a   Schnyder, I ^a   Huber, D ^a   Jackel H ^a   Bergamaschi, C ^b  

^a ETH ZURICH   (Switzerland)

^b Fachhochschule Aarguu fur Technik   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039568863     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1369406     Document Type: Article

References (7)

1. W. Liu and J. Harris, Jpn. J. Appl. Phys., Part 1 31, 2349 (1992).
2. S. Tiwari, D. J. Frank, and S. L. Wright, J. Appl. Phys. 64, 5009 (1988).
3. I. Schnyder et al., WOCSDICE Proceedings, VII-9, (2000).
4. N. Matine et al., Jpn. J. Appl. Phys., Part 1 38, 1200 (1999).
5. D. Huber et al., J. Lightwave Technol. 18, 992 (2000).
6. W. E. Spicer et al., J. Vac. Sci. Technol. 16, 1422 (1979).
7. C. H. Henry, R. A. Logan, and F. R. Merritt, J. Appl. Phys. 49, 3530 (1978).