Experimental I-V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases

Solid-State Electronics

Volumn 44, Issue 4, 2000, Pages 587-592

  Hsin, Y M ^a   Asbeck, P M ^b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC SPACE CHARGE; ELECTRIC VARIABLES MEASUREMENT; EPITAXIAL GROWTH; INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

BASE EMITTER JUNCTION; CURRENT GAIN MEASUREMENT; EMITTER SIZE EFFECT; SURFACE RECOMBINATION CURRENT; THIN BASES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033900887     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00294-4     Document Type: Article

References (6)

1. Nakajima O., Nagata K., Ito H., Ishibashi T., Sugeta T. Japan Journal of Applied Physics. 24:1985;L596-L598.
2. Grinberg A.A., Luryi S. Solid State Electronics. 35:1992;1299-1309.
3. Levi A.F.J., Jalali B., Nottenburg R.N., Cho A.Y. Applied. Physics. Letters. 60:1992;460-462.
4. Hsin Y.M., Vu D.P., Asbeck P.M. Electronics Letters. 32:(14):1996;1323-1324.
5. Harmon E.S., Lovejoy M.L., Melloch M.R., Lundstrom M.S. Applied Physics Letters. 63:1993;536-538.
6. Hayama N., Honjo K. IEEE Electron Device Letters. 11:1990;388-390.