Surface recombination mechanism in graded-base InGaAs-InP HBTs

IEEE Transactions on Electron Devices

Volumn 51, Issue 6, 2004, Pages 1044-1045

  Jin, Z ^a   Neumann, S ^a   Prost, W ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

Graded base; Heterostructure bipolar transistor (HBT); InP; Surface recombination

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; GAIN MEASUREMENT; MATHEMATICAL MODELS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

GRADED BASE TRANSISTORS; SURFACE RECOMBINATION MECHANISM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 2942679265     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.827380     Document Type: Article

References (8)

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