Quantification of nitrogen profiles in HfSiON films for gate dielectrics

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 561-564

  Yamamoto, T ^a   Miyamoto, T ^a   Karen, A ^a  

^a TORAY RESEARCH CENTER INC   (Japan)

Author keywords

Depth profile; Gate dielectric; HfSiON; High k; Quantification; RBS; XPS

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); NITRIDES; NITROGEN; SECONDARY ION MASS SPECTROMETRY; SYNTHESIS (CHEMICAL); X RAY PHOTOELECTRON SPECTROSCOPY;

DEPTH PROFILE; GATE DIELECTRICS; HFSION; HIGH K; QUANTIFICATION;

HAFNIUM COMPOUNDS;

EID: 2942586911     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.094     Document Type: Conference Paper

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