Nitrogen analysis in high-k stack layers: A challenge

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 581-584

  Conard, T ^a   Vandervorst, W ^a,b   De Witte, H ^c   Van Elshocht, S ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c ASM BELGIUM   (Belgium)

Author keywords

Carbon based flooding; High k dielectrics; MCs +; Nitrided HfO 2

Indexed keywords

DIELECTRIC PROPERTIES; ELECTRIC INSULATORS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MOS DEVICES; NITROGEN; PROFILOMETRY; SECONDARY ION MASS SPECTROMETRY;

CARBON BASED FLOODING; HFO2; HIGH K-DIELECTRICS; MCS+;

SURFACE CHEMISTRY;

EID: 2942562291     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.110     Document Type: Conference Paper

References (7)

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2. De Witte H., Conard T., Vandervorst W., Gijbels R. SIMS analysis of oxynitrides: evidence for nitrogen diffusion induced by oxygen flooding. Surf. Interf. Anal. 29(11):2000;761-765.
3. T. Conard, H. De Witte, M. Schaekers, W. Vandervorst, in: Proceedings of the 12th International Conference on Secondary Ion Mass Spectrometry - SIMS XII, 5-10 September 1999, Brussel, Belgium, 2000, Elsevier, Amsterdam, pp. 381-384.
4. T. Wirtz, H.-N. Migeon, in: Proceedings of the SIMS XIV, San Diego, USA, 14-19 September 2003.
5. T. Conard, C. Huyghebaert, W. Vandervorst, in: Proceedings of the SIMS XIV, vol. 231-232, San Diego, USA, 2004, pp. 603-608.
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