Laterally resolved crystalline damage in single-point-diamond-turned silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 118, Issue 1-4, 1996, Pages 431-436

  Jeynes, C ^a   Puttick, K E ^a   Whitmore, L C ^a,d   Gartner K ^b   Gee, A E ^c   Millen, D K ^a   Webb, R P ^a   Peel, R M A ^a   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^c CRANFIELD UNIVERSITY   (United Kingdom)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; AMORPHOUS MATERIALS; CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); ION BEAMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SURFACE STRUCTURE; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

CHANNELLING; ION MICROBEAM RUTHERFORD BACKSCATTERING; SINGLE POINT DIAMOND TURNED SILICON;

CRYSTAL DEFECTS;

EID: 0030565064     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01464-0     Document Type: Article

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