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Volumn 32, Issue 10 A, 1999, Pages
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Influence of substitutional carbon on the Si/Ge interdiffusion studied by X-ray diffractometry at superlattice structures
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Author keywords
[No Author keywords available]
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Indexed keywords
ATMOSPHERIC PRESSURE;
CARBON;
COMPOSITION EFFECTS;
HYDROSTATIC PRESSURE;
POINT DEFECTS;
SEMICONDUCTOR SUPERLATTICES;
SILICON;
TEMPERATURE;
X RAY DIFFRACTION ANALYSIS;
POINT DEFECT SPECTRUM;
SUBSTITUTIONAL CARBON;
INTERDIFFUSION (SOLIDS);
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EID: 0032689287
PISSN: 00223727
EISSN: None
Source Type: Journal
DOI: 10.1088/0022-3727/32/10A/316 Document Type: Article |
Times cited : (9)
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References (16)
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