Fabrication of thin-film polycrystalline silicon solar cells by silane-gas-free process using aluminum-induced crystallization

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 A, 2003, Pages 1526-1532

  Ito, Tadashi ^a   Fukushima, Hideoki ^a   Yamaguchi, Masafumi ^b  

^a Rd Management Section   (Japan)

^b TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

Aluminum induced crystallization; Physical vapor deposition; Polycrystalline silicon thin film; Silane gas free process; Solar cell

Indexed keywords

ALUMINUM; CRYSTALLIZATION; DIFFUSION IN SOLIDS; EVAPORATION; FILM GROWTH; GRAIN BOUNDARIES; PASSIVATION; PHYSICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SILANES; SPUTTER DEPOSITION; THIN FILMS;

ALUMINUM INDUCED CRYSTALLIZATION; SILANE-GAS-FREE PROCESS; SPIN ON GLASS TECHNIQUE;

SILICON SOLAR CELLS;

EID: 0037932026     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1526     Document Type: Article

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