-
1
-
-
0024612018
-
-
A. Mimura, N. Konishi, K. Ono, J. Ohwada, Y. Hosokawa, Y. A. Ono, T. Suzuki, K. Miyata, and H. Kawakami, IEEE Trans. Electron Devices, ED-36, 351 (1989).
-
(1989)
IEEE Trans. Electron Devices
, vol.ED-36
, pp. 351
-
-
Mimura, A.1
Konishi, N.2
Ono, K.3
Ohwada, J.4
Hosokawa, Y.5
Ono, Y.A.6
Suzuki, T.7
Miyata, K.8
Kawakami, H.9
-
2
-
-
0030406631
-
-
C. C. Wu, S. Theiss, M. H. Lu, J. C. Sturm, and S. Wagner, Tech. Dig. - Int. Electron Devices Meet., 1996, 957.
-
Tech. Dig. - Int. Electron Devices Meet., 1996
, pp. 957
-
-
Wu, C.C.1
Theiss, S.2
Lu, M.H.3
Sturm, J.C.4
Wagner, S.5
-
4
-
-
0000403217
-
-
T. W. Little, K. Takahara, H. Koike, T. Nakazawa, I. Yudasaka, and H. Ohshima, Jpn. J. Appl. Phys., Part 1, 38, 3724 (1991).
-
(1991)
Jpn. J. Appl. Phys., Part 1
, vol.38
, pp. 3724
-
-
Little, T.W.1
Takahara, K.2
Koike, H.3
Nakazawa, T.4
Yudasaka, I.5
Ohshima, H.6
-
5
-
-
0024139624
-
-
E. Korin, R. Reif, and B. Mikic, Thin Solid Films, 167, 101 (1988).
-
(1988)
Thin Solid Films
, vol.167
, pp. 101
-
-
Korin, E.1
Reif, R.2
Mikic, B.3
-
6
-
-
0027847628
-
-
M. Bonnel, N. Duhamel, L. Haji, B. Loisel, and J. Stoemenos, IEEE Electron Device Lett., EDL-14, 551 (1993).
-
(1993)
IEEE Electron Device Lett.
, vol.EDL-14
, pp. 551
-
-
Bonnel, M.1
Duhamel, N.2
Haji, L.3
Loisel, B.4
Stoemenos, J.5
-
7
-
-
0034275292
-
-
H. Y. Kim, C. D. Park, Y. S. Kang, K. J. Jang, and J. Y. Lee, J. Vac. Sci. Technol. A, 18, 2085 (2000).
-
(2000)
J. Vac. Sci. Technol. A
, vol.18
, pp. 2085
-
-
Kim, H.Y.1
Park, C.D.2
Kang, Y.S.3
Jang, K.J.4
Lee, J.Y.5
-
9
-
-
0024627772
-
-
I. W. Wu, A. G. Lewis, T. Y. Huang, and A. Chiang, IEEE Electron Device Lett., EDL-10, 123 (1989).
-
(1989)
IEEE Electron Device Lett.
, vol.EDL-10
, pp. 123
-
-
Wu, I.W.1
Lewis, A.G.2
Huang, T.Y.3
Chiang, A.4
-
10
-
-
0022719826
-
-
T. Shameshima, S. Usui, and M. Sekiya, IEEE Electron Device Lett., EDL-7, 276 (1986).
-
(1986)
IEEE Electron Device Lett.
, vol.EDL-7
, pp. 276
-
-
Shameshima, T.1
Usui, S.2
Sekiya, M.3
-
12
-
-
0033326176
-
-
A. Hara, K. Kitahara, K. Nakajima, and M. Okabe, Jpn. J. Appl. Phys., Part 1, 38, 6624 (1999).
-
(1999)
Jpn. J. Appl. Phys., Part 1
, vol.38
, pp. 6624
-
-
Hara, A.1
Kitahara, K.2
Nakajima, K.3
Okabe, M.4
-
13
-
-
0026976680
-
-
H. Kuriyama, T. Kuwahara, S. Ishida, T. Nohda, K. Sano, H. Iwata, S. Noguchi, S. Kiyama, S. Tsuda, S. Nakano, M. Osumi, and Y. Kuwano, Jpn. J. Appl. Phys., Part 1, 31, 4550 (1992).
-
(1992)
Jpn. J. Appl. Phys., Part 1
, vol.31
, pp. 4550
-
-
Kuriyama, H.1
Kuwahara, T.2
Ishida, S.3
Nohda, T.4
Sano, K.5
Iwata, H.6
Noguchi, S.7
Kiyama, S.8
Tsuda, S.9
Nakano, S.10
Osumi, M.11
Kuwano, Y.12
-
14
-
-
0035362504
-
-
C. W. Lin, L. J. Cheng, Y. L. Lu, Y. S. Lee, and H. C. Cheng, IEEE Electron Device Lett., EDL-22, 269 (2001).
-
(2001)
IEEE Electron Device Lett.
, vol.EDL-22
, pp. 269
-
-
Lin, C.W.1
Cheng, L.J.2
Lu, Y.L.3
Lee, Y.S.4
Cheng, H.C.5
-
17
-
-
0027591211
-
-
K. S. Nam, Y. H. Song, J. T. Baek, H. J. Kong, and S. S. Lee, Jpn. J. Appl. Phys., Part 1, 32, 1908 (1993).
-
(1993)
Jpn. J. Appl. Phys., Part 1
, vol.32
, pp. 1908
-
-
Nam, K.S.1
Song, Y.H.2
Baek, J.T.3
Kong, H.J.4
Lee, S.S.5
-
18
-
-
0020089602
-
-
J. Levinson, G. Este, M. Rider, P. J. Scanlon, F. R. Shepherd, and W. D. Westwood, J. Appl. Phys., 53, 1193 (1982).
-
(1982)
J. Appl. Phys.
, vol.53
, pp. 1193
-
-
Levinson, J.1
Este, G.2
Rider, M.3
Scanlon, P.J.4
Shepherd, F.R.5
Westwood, W.D.6
-
19
-
-
0024739568
-
-
R. E. Proano, R. S. Misage, and D. G. Ast, IEEE Trans. Electron Devices, ED-36, 1915 (1989).
-
(1989)
IEEE Trans. Electron Devices
, vol.ED-36
, pp. 1915
-
-
Proano, R.E.1
Misage, R.S.2
Ast, D.G.3
-
21
-
-
0001033623
-
-
I. W. Wu, A. Chiang, M. Fuse, L. Ovecoglu, and T. Y. Huang, J. Appl. Phys., 65, 4036 (1989).
-
(1989)
J. Appl. Phys.
, vol.65
, pp. 4036
-
-
Wu, I.W.1
Chiang, A.2
Fuse, M.3
Ovecoglu, L.4
Huang, T.Y.5
-
23
-
-
0030574951
-
-
D. K. Fork, G. B. Anderson, J. B. Boyce, R. I. Johnson, and P. Mei, Appl. Phys. Lett., 68, 2138 (1996).
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 2138
-
-
Fork, D.K.1
Anderson, G.B.2
Boyce, J.B.3
Johnson, R.I.4
Mei, P.5
|