Minority carrier properties of single- and polycrystalline silicon films formed by aluminium-induced crystallisation

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2000-January, Issue , 2000, Pages 65-68

  Neuhaus, D H ^a   Bardos, R ^a   Feitknecht, L ^b   Puzzer, T ^a   Keevers, M J ^a   Aberle, A G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b UNIVERSITY OF NEUCHÂTEL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; AMORPHOUS FILMS; AMORPHOUS MATERIALS; AMORPHOUS SILICON; GLASS; POLYCRYSTALLINE MATERIALS; POLYSILICON; SILICON; SILICON SOLAR CELLS; SINGLE CRYSTALS; SOLAR CELLS; TEMPERATURE; THIN FILMS;

C-SI SOLAR CELL; FOREIGN SUBSTRATES; LOW TEMPERATURE METHOD; MINORITY CARRIER; MINORITY CARRIER DIFFUSION LENGTH; POLYCRYSTALLINE SILICON FILMS; POLYCRYSTALLINE-SI; QUANTUM EFFICIENCY MEASUREMENTS;

SILICON WAFERS;

EID: 84949550182     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.915754     Document Type: Conference Paper

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