Crystallization of a-Si:H on glass for active layers in thin film transistors effects of glass coating

Journal of the Electrochemical Society

Volumn 146, Issue 1, 1999, Pages 299-305

  Wang, Y Z ^a   Fonash, S J ^a   Awadelkarim, O O ^a   Gu, T ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b Optical Imaging Systems Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTAL IMPURITIES; CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; GRAIN SIZE AND SHAPE; LEAKAGE CURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GLASS; SILICON NITRIDE; THIN FILM TRANSISTORS;

AMORPHOUS HYDROGENATED SILICON; SOLID-PHASE CRYSTALLIZATION;

SEMICONDUCTING FILMS;

EID: 0032732931     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391604     Document Type: Article

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