Passivation effects of alumina insulating layer on C60 thin-film field-effect transistors

Applied Physics Letters

Volumn 81, Issue 10, 2002, Pages 1911-1912

  Horiuchi, Kazunaga ^a   Nakada, Kenji ^a   Uchino, Shin ^a   Hashii, Shinobu ^a   Hashimoto, Akira ^a   Aoki, Nobuyuki ^a   Ochiai, Yuichi ^a   Shimizu, Masaaki ^b  

^a CHIBA UNIVERSITY   (Japan)

^b FUJI XEROX CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INSULATING LAYERS; OXYGEN ADSORPTION; OXYGEN DEFICIENT; PASSIVATION EFFECT; RF-MAGNETRON SPUTTERING;

AMORPHOUS FILMS; DEGRADATION; GAS ADSORPTION; INSULATING MATERIALS; MAGNETRON SPUTTERING; MESFET DEVICES; OXYGEN; STOICHIOMETRY;

ALUMINA;

EID: 79958183703     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1505746     Document Type: Article

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