Fabrication and characterization of C60 thin-film transistors with high field-effect mobility

Applied Physics Letters

Volumn 82, Issue 25, 2003, Pages 4581-4583

  Kobayashi, S ^a,b   Takenobu, T ^a,b   Mon, S ^a,b   Fujiwara, A ^b,c   Iwasa, Y ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARRIER MOBILITY; DEPOSITION; ELECTRIC CURRENTS; ISOTOPES; MOLECULAR BEAMS; VACUUM;

FIELD-EFFECT MOBILITY;

THIN FILM TRANSISTORS;

EID: 0037706969     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1577383     Document Type: Article

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