Fabrication and characteristics of C84 fullerene field-effect transistors

Applied Physics Letters

Volumn 84, Issue 14, 2004, Pages 2572-2574

  Shibata, Kana ^a,b   Kubozono, Yoshihiro ^a,b   Kanbara, Takayoshi ^a   Hosokawa, Tomoko ^a,b   Fujiwara, Akihiko ^b,c   Ito, Yasuhiro ^b,d   Shinohara, Hisanori ^b,d  

^a OKAYAMA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^d NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CARRIER MOBILITY; CHARGE TRANSFER; FULLERENES; LIGHT EMITTING DIODES; SINGLE CRYSTALS; THERMAL EFFECTS; THIN FILMS; THRESHOLD VOLTAGE;

ACTIVE-MATRIX DISPLAYS; BULK CURRENTS; HOPPING TRANSPORT; LOWEST UNOCCUPIED MOLECULAR ORBITALS (LUMO);

FIELD EFFECT TRANSISTORS;

EID: 2342454400     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1695193     Document Type: Article

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