N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit

Chemical Physics Letters

Volumn 379, Issue 3-4, 2003, Pages 223-229

  Kanbara, T ^a   Shibata, K ^a   Fujiki, S ^b,c   Kubozono, Y ^a,b   Kashino, S ^a   Urisu, T ^c   Sakai, M ^c   Fujiwara, A ^b,d   Kumashiro, R ^b,e   Tanigaki, K ^b,e  

^a OKAYAMA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c INSTITUTE FOR MOLECULAR SCIENCE   (Japan)

^d JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^e Osaka Prefecture University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FULLERENE; METAL OXIDE;

ARTICLE; CONTROLLED STUDY; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT; ELECTROPHORETIC MOBILITY; ENERGY; FIELD EFFECT TRANSISTOR; FILM; INTEGRATED CIRCUIT; SEMICONDUCTOR; TEMPERATURE;

EID: 0141570408     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2003.07.025     Document Type: Article

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