Anomalous hall effect in wide bandgap diluted magnetic semiconductors co-doped with non-magnetic impurities

Proceedings - Electrochemical Society

Volumn 6, Issue , 2004, Pages 300-311

  Park, Y D ^a,b   Choi, H K ^a   Shim, S B ^a   Sub, K S ^a   Seo, S S A ^a   Noh, T W ^a   Kim, Y S ^a   Lee, J S ^a   Khim, Z G ^a   Abernathy, C R ^c   Pearton, S J ^c   Zavada, J M ^d  

^a Seoul National University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c UNIVERSITY OF FLORIDA   (United States)

^d U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HALL EFFECT; ION IMPLANTATION; MAGNETIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSITION METALS;

ANOMALOUS HALL EFFECT (AHE); HALL EFFECT SIGNALS; MAGNETIC IMPURITIES; NON-MAGNETIC IMPURITIES;

MAGNETIC SEMICONDUCTORS;

EID: 20144389084     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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