Three-terminal gated magnetoelectronic device

Applied Physics Letters

Volumn 80, Issue 17, 2002, Pages 3204-3206

  Zelakiewicz, S ^a   Johnson, Mark ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BISTABLES; ELECTROSTATIC GATES; FERROMAGNETIC FILMS; FRINGE FIELDS; GATE VOLTAGES; HALL DEVICES; HALL VOLTAGE; MAGNETOELECTRONIC DEVICES; NONVOLATILE MEMORY CELLS; OUTPUT LEVELS; PASSIVE DEVICES; SPINTRONIC DEVICE;

CRITICAL CURRENTS; ELECTRIC FIELDS; FERROMAGNETIC MATERIALS; HALL EFFECT DEVICES; MAGNETOELECTRONICS; NONVOLATILE STORAGE; TWO DIMENSIONAL ELECTRON GAS;

EQUIPMENT;

EID: 79955999664     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1467700     Document Type: Article

References (9)

1. M. Johnson, IEEE Spectrum 37, 33 (2000). esp IEESAM 0018-9235
2. V. Kubrak, F. Rahman, B. L. Gallagher, P. C. Main, M. Henini, C. H. Marrows, and M. A. Howson, Appl. Phys. Lett. 74, 2507 (1999). apl APPLAB 0003-6951
3. A. K. Geim, S. V. Dubonos, J. G. S. Lok, I. V. Griegorieva, J. C. Maan, L. T. Hansen, and P. E. Lindelof, Appl. Phys. Lett. 71, 2379 (1997). apl APPLAB 0003-6951
4. M. Johnson, B. R. Bennett, P. R. Hammar, and M. M. Miller, Solid-State Electron. 44, 1099 (2000). sel SSELA5 0038-1101
5. M. Johnson, B. Bennett, M. J. Yang, M. M. Miller, and B. V. Shanabrook, Appl. Phys. Lett. 71, 974 (1997); apl APPLAB 0003-6951
6. M. Johnson, B. Bennett, M. J. Yang, M. M. Miller, and B. V. Shanabrook, IEEE Trans. Magn. 34, 1054 (1998). emg IEMGAQ 0018-9464
7. Gated Hall field sensors, which are not integrated devices and do not have applications in digital electronics, are described in R. S. Popovic, Hall Effect Devices (Adam Hilger, Bristol, 1991).
8. The sample wafer was commercially obtained from Quantum Epitaxial Designs, Inc., Bethlehem, PA.
9. J. Reijniers and F. M. Peeters, Appl. Phys. Lett. 73, 357 (1998). apl APPLAB 0003-6951