Strong Hall voltage modulation in hybrid ferromagnet/semiconductor microstructures

Applied Physics Letters

Volumn 71, Issue 21, 1997, Pages 3087-3089

  Monzon, F G ^a   Johnson, Mark ^a,b   Roukes, M L ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; FERROMAGNETIC MATERIALS; HALL EFFECT; MAGNETIC FIELDS; MAGNETIC FILMS; MAGNETIC HYSTERESIS; MAGNETIZATION; PHOTOLITHOGRAPHY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

FERROMAGNETIC FILM; HALL RESISTANCE; HALL VOLTAGE MODULATION; MAGNETO ELECTRONIC DEVICE;

HETEROJUNCTIONS;

EID: 0031273924     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120254     Document Type: Article

References (10)

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4. M. Johnson, Phys. Rev. Lett. 70, 2142 (1993).
5. Other simple devices which also rely on an in-plane film magnetization are discussed by G. A. Prinz, Science 250, 1092 (1990).
6. We use a value of permalloy measured on a test strip deposited under identical conditions as the sample films. Thermal evaporation yields a slightly Ni-poor film. See K. R. Carson and M. L. Rudee, J. Vac. Sci. Technol. 7, 573 (1970).
7. We account for the undercut of the mesa etch, ∼0.1-0.2 μm, and depletion at the channel edges, ∼0.3 μm, leaving an electrical channel width of about 2.2 μm. See K. K. Choi, D. C. Tsui, and A. Alavi, Appl. Phys. Lett. 50, 110 (1987).
8. M. L. Roukes, A. Scherer, S. J. Allen, H. G. Craighead, R. M. Ruthen, E. D. Beebe, and J. P. Harbison, Phys. Rev. Lett. 59, 3011 (1987).
9. C. W. J. Beenakker and H. van Houten, Phys. Rev. Lett. 63, 1857 (1989).
10. H≈70 Ω, to obtain an appreciable Hall (i.e., transverse) output voltage swing of ≈20 mV requires I≈300 μA. For a local Hall element, this would result in power dissipation during read cycles of order 1 mW (longitudinal voltage drop ∼3 V). The lead resistances arising from long paths in our initial chip layout required use of smaller source currents (≤s1 μA) and, hence, produced smaller output voltages.