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Volumn 16, Issue 3, 1998, Pages 1806-1811
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Hybrid ferromagnet-semiconductor devices
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPES;
BI-LAYER STRUCTURE;
BISTABLES;
FERROMAGNETIC COMPONENT;
FERROMAGNETIC ELEMENTS;
FERROMAGNETIC FILMS;
FERROMAGNETS;
HALL ELEMENTS;
HIGH MOBILITY;
MAGNETIC FIELD SENSORS;
MAGNETIC FORCE MICROSCOPES;
MAGNETIC STATE;
MAGNETOELECTRONIC DEVICES;
MICROMAGNETISMS;
NONVOLATILE MEMORY CELLS;
OUTPUT CHARACTERISTICS;
OUTPUT LEVELS;
PROTOTYPE DEVICES;
SILICON TECHNOLOGIES;
SUBMICRON SIZE;
CRITICAL CURRENTS;
FABRICATION;
FERROMAGNETISM;
GALVANOMAGNETIC EFFECTS;
HALL MOBILITY;
INDIUM ARSENIDE;
MAGNETIC FIELDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICES;
FERROMAGNETIC MATERIALS;
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EID: 0001473716
PISSN: 07342101
EISSN: None
Source Type: Journal
DOI: 10.1116/1.581111 Document Type: Article |
Times cited : (22)
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References (15)
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