Numerical study of the RESURF effect in bulk and SOI power devices

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 1997, Pages 127-130

  Popescu, A ^a   Udrea, F ^a   Milne, W ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; EPITAXIAL GROWTH; POWER ELECTRONICS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

REDUCED SURFACE FIELDS (RESURF);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0030635449     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)