850 V DMOS-switch in silicon-on-insulator with specific Ron of 13 Ω-mm2

IEEE International SOI Conference

Volumn , Issue , 2000, Pages 62-63

  Zingg, Rene P ^a   Weijland, Inesz ^a   van Zwol, Hans ^a   Boos, Priscilla ^a   Lavrijsen, Theo ^a   Schoenmakers, Theo ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC POTENTIAL; POLYSILICON;

POLYCIDE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0034472733     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)