Breakdown model and new structure of SOI high voltage devices with step buried oxide fixed charges

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 25, Issue 12, 2004, Pages 1695-1700

  Guo, Yufeng ^a   Li, Zhaoji ^a   Zhang, Bo ^a   Fang, Jian ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Breakdown voltage; Buried oxide fixed charge; Model; SOI

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELDS; MATHEMATICAL MODELS; NUMERICAL ANALYSIS; POISSON EQUATION; SEMICONDUCTOR DEVICES; VOLTAGE CONTROL;

BREAKDOWN MODEL; BREAKDOWN VOLTAGE; BURIED OXIDE FIXED CHARGE; TRADEOFF;

SILICON ON INSULATOR TECHNOLOGY;

EID: 13644278039     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

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