Length quantization in In0.13Ga0.87As/GaAs quantum boxes with rectangular cross section

Applied Physics Letters

Volumn 70, Issue 3, 1997, Pages 393-395

  Michel, M ^a   Forchel, A ^a   Faller, F ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342400032     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118384     Document Type: Article

References (18)

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14. 2).
15. Because the extent of the boxes is much larger than the exciton Bohr radius, changes of the exciton binding energies between the ground and the excited state as well as the length dependence of the exciton binding energy are expected to be small. Therefore, these effects have not been taken into account in the evaluation of the data.
16. 0.87As/GaAs quantum well is larger than 50 meV. Due to partial strain relaxation the photoluminescence of etched nanostructures with lateral sizes around 100 nm is redshifted by 2 meV with respect to the two-dimensional reference. This implies that the influence of strain relaxation on the quantum boxes is very small.
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