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Volumn 361-362, Issue , 1996, Pages 805-809

Exciton interaction effects in the emission spectra of single free-standing InGaAs/GaAs quantum dots

Author keywords

Electron beam lithography; InGaAs; Photoluminescence; Quantum effects; Single quantum dot; Wet etching

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; EMISSION SPECTROSCOPY; ETCHING; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030190283     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00538-9     Document Type: Article
Times cited : (4)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.