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Volumn 361-362, Issue , 1996, Pages 805-809
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Exciton interaction effects in the emission spectra of single free-standing InGaAs/GaAs quantum dots
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Author keywords
Electron beam lithography; InGaAs; Photoluminescence; Quantum effects; Single quantum dot; Wet etching
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Indexed keywords
ELECTRON BEAM LITHOGRAPHY;
ELECTRON TRANSITIONS;
ELECTRONIC DENSITY OF STATES;
EMISSION SPECTROSCOPY;
ETCHING;
EXCITONS;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM ARSENIDE;
COULOMB INTERACTION;
ENERGY RENORMALIZATION;
EXCITON INTERACTION EFFECTS;
LOW VOLTAGE ELECTRON BEAM LITHOGRAPHY;
QUANTUM EFFECTS;
WET CHEMICAL ETCHING;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0030190283
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/0039-6028(96)00538-9 Document Type: Article |
Times cited : (4)
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References (9)
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