High mobility in ZnO thin films deposited on perovskite substrates with a low temperature nucleation layer

Applied Physics Letters

Volumn 86, Issue 1, 2005, Pages

  Bellingeri, E ^a   Marr D ^a   Pallecchi, I ^a   Pellegrino, L ^a   Siri, A S ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; ELECTRON MOBILITY; EPITAXIAL GROWTH; HALL EFFECT; MAGNETORESISTANCE; NUCLEATION; OPTOELECTRONIC DEVICES; PEROVSKITE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

DEPOSITION TEMPERATURE; EPITAXIAL THIN FILMS; FULL WIDTH AT HALF MAXIMUM (FWHM); SPECTROSCOPIC ELLIPSOMETRY;

THIN FILMS;

EID: 19744383009     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1844034     Document Type: Article

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