An advanced low-frequency noise model of GaInP-GaAs HBT for accurate prediction of phase noise in oscillators

IEEE Transactions on Microwave Theory and Techniques

Volumn 53, Issue 5, 2005, Pages 1601-1611

  Nallatamby, Jean Christophe ^a   Prigent, Michel ^a   Camiade, Marc ^b   Sion, Arnaud ^b   Gourdon, Cyril ^b   Obregon, Juan J ^a  

^a UNIVERSITY OF LIMOGES   (France)

^b United Monolithic Semiconductors GmbH   (Germany)

Author keywords

Cyclostationary noise sources; Hbt models; Low frequency noise modeling; Monolithic microwave integrated circuit (mmic) voltage controlled oscillator (vco) phase noise; Physical noise sources in hbts

Indexed keywords

APPROXIMATION THEORY; BANDWIDTH; COMPUTER AIDED DESIGN; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NATURAL FREQUENCIES; OSCILLATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SPURIOUS SIGNAL NOISE; VARIABLE FREQUENCY OSCILLATORS;

CYCLOSTATIONARY NOISE SOURCES; HBT MODELS; LOW-FREQUENCY NOISE MODELING; PHASE NOISE; PHYSICAL NOISE SOURCES IN HBTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 19544386167     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2005.847050     Document Type: Article

References (36)

1. M. Camiade et al., "Fully MMIC-based front end for FMCW automotive radar at 77 GHz," in Eur. Microwave Conf., vol. 1, Paris, France, 2000, pp. 9-12.
2. "Session TU2D: Integrated circuits for 40 Gb/s fiber systems," in IEEE MTT-S Int. Microwave Symp. Dig, Seattle, WA, May 2002, pp. 75-91.
3. J. Obregon and J. C. Nallatamby et al., "High-frequency oscillator circuit design," in RF and Microwave Oscillator Design, M. Odyniec et al., Ed. Norwood, MA: Artech House, 2002.
4. P. Bolcato et al., "A unified approach of PM noise calculation in large RF multitone autonomous circuit," in IEEE MTT-S Int. Microwave Symp. Dig, Boston, MA, Jun. 2000, pp. 417-420.
5. J. C. Nallatamby et al., "Semiconductor device and noise sources modeling, design methods and tools, oriented to non linear H.F. oscillator CAD," presented at the SPIE Int. Symp. Conf., Maspalomas, Gran Canaria, Spain, May 2004.
6. Design Manuals of the MMIC Foundries, United Monolithic Semiconduct., Orsay, France, 2000.
7. T. Peyretaillade et al., "A pulsed measurement based electro thermal model of HBT with thermal stability prediction capability," in IEEE MTT-S Int. Microwave Symp. Dig, Denver, CO, Jun. 1997, pp. 1515-1518.
8. T. Dhaene, J. De Geest, and D. De Zutter, "Constrained EM-based modeling of passive components," in IEEE MTT-S Int. Microwave Symp. Dig, vol. 3, Seattle, WA, May 2002, pp. 2113-2116.
9. J. G. Tartarin, L. Escotte, and J. Graffeuil, "Small signal model extraction technique dedicated to noise behavior of microwave HBTs," in GaAs Symp., Amsterdam, The Netherlands, 1998, pp. 301-306.
10. A. Van der Ziel and E. R. Chenette, "Noise in solid state devices," in Advances in Electronics and Electron Physics, S. L. Marton and C. Marton, Eds. New York: Academic, 1978, vol. 46.
11. G. Niu et al., "A unified approach to RF and microwave noise parameter modeling in bipolar transistors," IEEE Trans. Electron Devices, vol. 48, no. 11, pp. 2568-2574, Nov. 2001.
12. M. Rudolph et al., "An HBT noise model valid up to transit frequency," IEEE Electron Device Lett., vol. 20, no. 1, pp. 24-26, Jan. 1999.
13. S. Mohammadi and D. Pavlidis, "A non fundamental theory of low frequency noise in semiconductor devices," IEEE Trans. Electron Devices, vol. 47, no. 11, pp. 2009-2017, Nov. 2000.
14. P. Heymann et al., "Modeling of low-frequency noise in GaInP/GaAs hetero-bipolar transistors," in IEEE MTT-S Int. Microwave Symp. Dig, vol. 3, Boston, MA, Jun. 2001, pp. 1967-1970.
15. A. Penarier et al., "Low frequency noise in III-V high speed devices," Proc. Inst. Elect. Eng. - Circuits, Devices, Syst., vol. 49, no. 1, pp. 59-67, Feb. 2002.
16. Y. S. Kim et al., "Influence of magnetic field on 1/f noise and thermal noise in multiterminal homogeneous semiconductor resistors and discrimination between the number fluctuation model and the mobility fluctuation model for 1/f noise in bulk semiconductors," Solid-State Electron., vol. 48, pp. 641-654, 2004.
17. R. Plana et al., "Excess noise in microwave GaInP/GaAs heterojunction bipolar transistors," in Proc. Eur. GaAs and Related III-V Compounds Applications Symp., Turin, Italy, Apr. 1994, pp. 131-134.
18. A. Cappy et al., "Noise analysis in devices under nonlinear operation," Solid State Electron., vol. 43, pp. 21-26, 1999.
19. F. Bonani, S. D. Guerrieri, and G. Ghione, "Noise source modeling for cyclostationary noise analysis in large-signal device operation," IEEE Trans. Electron Devices, vol. 49, no. 9, pp. 1640-1647, Sep. 2002.
20. J. C. Nallatamby, M. Prigent, and J. Obregon, "On the role of additive and converted noise in the generation of phase noise in nonlinear oscillators," IEEE Trans. Microw. Theory Tech..
21. B. Li, S. Prasad, L.-W. Yiang, and S. C. Wang, "Large signal characterization of A1GaAs/GaAs HBT's," IEEE Trans. Microw. Theory Tech., vol. 47, no. 9, pp. 1743-1746, Sep. 1999.
22. D. R. Pehlke et al., "Direct parametric extraction of 1/f noise source magnitude and physical location from baseband spectra in HBT's," in IEEE MTT-S Int. Microwave Symp. Dig, vol. 3, Jun. 1996, pp. 1305-1308.
23. T. G. M. Kleinpenning, "Low-frequency noise in modern bipolar transistors: Impact of intrinsic transistor and parasitic series resistances," IEEE Trans. Electron Devices, vol. 41, no. 11, pp. 1981-1991, Nov. 1994.
24. G. Kulke and S. L. Miller, "Accurate measurement of emitter and collector series resistances in transistors," Proc. IRE, vol. 45, pp. 171-175, Jan. 1962.
25. Y. Takanashi and H. Fukano, "Low-frequency noise of InP/InGaAs heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 45, no. 12, pp. 2400-2406, Dec. 1998.
26. A. Pénarier et al., "Low-frequency noise of InP/InGaAS heterojunction bipolar transistors," Jpn. J. Appl. Phys., vol. 40, pp. 525-529, 2001.
27. E. Zhao et al., 'Temperature dependence of 1/f noise in polysilicon-emitter bipolar transistors," IEEE Trans. Electron Devices, vol. 49, no. 12, pp. 2230-2236, Dec. 2002.
28. E. Hayama and K. Honjo, "Emitter size effect on current gain in fully self-aligned AlGaAs/GaAs HBT's with AlGaAs surface passivation layer," IEEE Electron Device Lett., vol. 11, no. 9, pp. 388-390, Sep. 1990.
29. S. Perez et al., "Microscopic analysis of generation-recombination noise in semiconductors under dc and time varying electric fields," J. Appl. Phys., vol. 88, no. 2, Jul., 15 2000.
30. _, "Monte Carlo analysis of the influence of DC conditions on the up conversion of generation-recombination noise in semi-conductors," in Revue Semiconductor Science and Technology, No. 16. London, U.K.: IOP, 2001, pp. L8-L1l.
31. J. E. Sanchez, G. Bosman, and M. E. Law, "Simulation of GR noise of resistor and junctions under periodic large signal steady state condition," in 16th Int. Noise in Physical System and 1/f Noise Conf., Gainesville, FL, Oct. 2001, pp. 645-648.
32. _, "Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models," IEEE Trans. Electron Devices, vol. 50, no. 5, pp. 1353-1362, May 2003.
33. J. E. Sanchez, "Semiconductor device simulation of low-frequency noise under period large-signal conditions," Ph.D. dissertation, Dept. Elect. Comput. Eng., Univ. Florida, Gainesville, FL, 2000.
34. C. Dragone, "Analysis of thermal and shot noise in pumped resistive diodes," Bell Syst. Tech. J., pp. 1883-1902, Nov. 1968.
35. A. R. Kerr, "Noise and loss in balanced and sub harmonically pumped mixers: Part I - Theory," IEEE Trans. Microw. Theory Tech., vol. MTT-27, no. 12, pp. 938-943, Dec. 1979.
36. O. Jantsch, "Flicker (1/f) noise generated by random walk of electrons in interfaces," IEEE Trans. Electron Devices, vol. ED-34, pp. 1100-1115, May 1987.