Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models

IEEE Transactions on Electron Devices

Volumn 50, Issue 5, 2003, Pages 1353-1362

  Sanchez, Juan E ^a   Bosman, Gijs ^a   Law, Mark E ^a  

^a University of Florida   (United States)

Author keywords

Correlation; Frequency conversion; Mixer noise; Nonlinear circuits; Nonlinear systems; Semiconductor device modeling; Semiconductor device noise

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC IMPEDANCE; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE; TWO DIMENSIONAL;

FREQUENCY CONVERSION; GENERATION RECOMBINATION NOISE; MIXER NOISE; NONLINEAR CIRCUITS; SEMICONDUCTOR DEVICE NOISE; SEMICONDUCTOR DEVICE SIMULATION; SILICON DEVICE SIMULATOR;

INTEGRATED CIRCUIT LAYOUT;

EID: 0042490772     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813448     Document Type: Article

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