Large-signal characterization of AlGaAs/GaAs HBT's

IEEE Transactions on Microwave Theory and Techniques

Volumn 47, Issue 9 I, 1999, Pages 1743-1746

  Li, Bin ^a   Prasad, Sheila ^b   Yang, Li Wu ^c   Wang, S C ^d  

^a Vitesse Semiconductor Corporation   (United States)

^b Northeastern University   (United States)

^c NORTHROP GRUMMAN CORPORATION   (United States)

^d BAE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

EBERS-MOLL MODEL;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033360229     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.788597     Document Type: Article

References (8)