A nonfundamental theory of low-frequency noise in semiconductor devices

IEEE Transactions on Electron Devices

Volumn 47, Issue 11, 2000, Pages 2009-2017

  Mohammadi, Saeed ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Flicker noise; Generation recombination noise; Heterojunction bipolar transistor; I noise; Low frequency noise

Indexed keywords

FLICKER NOISE; GENERATION RECOMBINATION NOISE; LOW FREQUENCY NOISE; NOISE SPECTRAL DENSITY;

CARRIER MOBILITY; ELECTRON TRAPS; ENERGY GAP; HETEROJUNCTION BIPOLAR TRANSISTORS; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL NOISE MEASUREMENT; SPECTRUM ANALYSIS;

SPURIOUS SIGNAL NOISE;

EID: 0034317021     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.877159     Document Type: Article

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