Modeling of low-frequency noise in GaInP/GaAs hetero-bipolar transistors

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2001, Pages 1967-1970

  Heymann, Peter ^a   Rudolph, Matthias ^a   Doerner, Ralf ^a   Lenk, Friedrich ^a  

^a FBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; DIODES; EQUIVALENT CIRCUITS; MATHEMATICAL MODELS; MICROWAVE OSCILLATORS; SEMICONDUCTING GALLIUM COMPOUNDS; SPURIOUS SIGNAL NOISE;

BASE EMITTER DIODE; EMITTER RESISTANCE; GALLIUM INDIUM PHOSPHIDE; LOW FREQUENCY NOISE; OSCILLATOR PHASE NOISE SIMULATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035689599     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.967295     Document Type: Article

References (9)

1. A power combined W-band HBT oscillator
2. Impact of 1/f noise in Ka-band InGaP/GaAs frequency sources
3. Low phase noise GaInP/GaAs HBT MMIC-oscillators up to 36 GHz
4. GaInP/GaAs HBTs for high-speed integrated circuit applications
5. 1/f noise in self-aligned Si/SiGe heterojunction bipolar transistor
6. An HBT noise model valid up to the transit frequency
7. Extraction of low-frequency noise model of self-aligned AlGaAs/GaAs heterojunction bipolar transistor
8. Low-frequency noise in modern bipolar transistors: Impact of intrinsic transistor and parasitic series resistances
9. Excess noise in AlGaAs/GaAs heterojunction bipolar transistors and associated TLM test structures