Effective Normal Field Dependence of Inversion Channel Mobility in 4H-SiC MOSFETs on the (112̄0) Face

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 613-616

  Senzaki, Junji ^a   Kojima, Kazutoshi ^a   Suzuki, Takaya ^a   Fukuda, Kenji ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

4H SiC(112 0)Face; Effective Normal Field; Inversion Channel Mobility; MOSFETs

Indexed keywords

CARRIER MOBILITY; INTERFACES (MATERIALS); MOSFET DEVICES; OXIDATION; PHONONS; THERMAL EFFECTS;

INVERSION CHANNEL MOBILITY;

SILICON CARBIDE;

EID: 18744431239     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.613     Document Type: Conference Paper

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