SCOPUS 정보 검색 플랫폼

Volumn 621, Issue , 2000, Pages

Sub-grain boundary spacing in directionally crystallized Si films obtained via sequential lateral solidification

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DENSITY (SPECIFIC GRAVITY); GRAIN BOUNDARIES; MICROSTRUCTURE; SEMICONDUCTING SILICON; SOLIDIFICATION; THERMAL STRESS;

SEQUENTIAL LATERAL SOLIDIFICATION;

THIN FILMS;

EID: 0034429921 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-621-q9.6.1 Document Type: Conference Paper

Times cited : (15)

References (15)

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11
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12
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13
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15
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- edited by A. Gonis, P.E.A. Turchi, and A.J. Ardell (Mater. Res. Soc. Proc., Pittsburg, Penn.), to be published
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- Leonard, J.P.¹ Im, J.S.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.