Reproducible lateral force microscopy measurements for quantitative comparisons of the frictional and chemical properties of nanostructures

Ultramicroscopy

Volumn 99, Issue 2-3, 2004, Pages 189-196

  Such, M W ^a   Kramer, D E ^a   Hersam, M C ^a  

^a Northwestern University   (United States)

Author keywords

07.79.S; 18; 68.65; 81.65.C; Lateral force microscopy; Nanolithography; Oxidation; Silicon

Indexed keywords

ALIGNMENT; ATOMIC FORCE MICROSCOPY; CANTILEVER BEAMS; CROSSTALK; ERROR ANALYSIS; FEEDBACK AMPLIFIERS; SCANNING;

ATOMIC FORCE MICROSCOPY (AFM); FRICTIONAL PROPERTIES; LATERAL FORCE MICROSCOPY (LFM) DATA; SURFACE REACTIVITY;

NANOSTRUCTURED MATERIALS;

HYDROGEN; OXIDE; SILICON;

ARTICLE; FRICTION; MICROSCOPY; QUANTITATIVE ANALYSIS; REPRODUCIBILITY; SCANNING PROBE MICROSCOPY; STRUCTURE ANALYSIS; SURFACE PROPERTY; TOPOGRAPHY;

EID: 1942517326     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2003.12.005     Document Type: Article

References (27)

1. Mate C.M., McClelland G.M., Erlandsson R., Chiang S. Phys. Rev. Lett. 59:1987;1942.
2. Meyer G., Amer N.M. Appl. Phys. Lett. 57:1990;2089.
3. Piner R.D., Zhu J., Xu F., Hong S., Mirkin C.A. Science. 283:1999;661.
4. Binggeli M. Appl. Phys. Lett. 65:1994;415.
5. Schwarz U.D., Allers W., Gensterblum G., Wiesendanger R. Phys. Rev. B. 52:1995;14976.
6. Schwarz U.D., Köster P., Wiesendanger R. Rev. Sci. Instrum. 67:1996;2560.
7. Piner R., Ruoff R.S. Rev. Sci. Instrum. 73:2002;3392.
8. Ara M., Graaf H., Tada H. Appl. Phys. Lett. 80:2002;2565.
9. Wacaser B.A., Maughan M.J., Mowat I.A., Niederhauser T.L., Linford M.R., Davis R.C. Appl. Phys. Lett. 82:2003;808.
10. Teuschler T., Mahr K., Miyazaki S., Hundhausen M., Ley L. Appl. Phys. Lett. 67:1995;3144.
11. Teuschler T., Mahr K., Miyazaki S., Hundhausen M., Ley L. J. Vac. Sci. Technol. B. 14:1996;1268.
12. Ley L., Teuschler T., Mahr K., Miyazaki S., Hundhausen M. J. Vac. Sci. Technol. B. 14:1996;2845.
13. Teuschler T., Mahr K., Miyazaki S., Hundausen M., Ley L. Appl. Phys. Lett. 66:1995;2499.
14. Avouris Ph., Hertel T., Martel R. Appl. Phys. Lett. 71:1997;285.
15. Jungblut H., Wille D., Lewerenz H.J. Appl. Phys. Lett. 78:2001;168.
16. Stiévenard D., Fontaine P.A., Dubois E. Appl. Phys. Lett. 70:1997;3273.
17. Snow E.S., Campbell P.M. Appl. Phys. Lett. 64:1994;1932.
18. Burrows V.A., Chabal Y.J., Higashi G.S., Raghavachari K., Christman S.B. Appl. Phys. Lett. 53:1988;998.
19. Chabal Y.J., Higashi G.S., Raghavachari K., Burrows V.A. J. Vac. Sci. Technol. A. 7:1989;2104.
20. Higashi G.S., Chabal Y.J., Trucks G.W., Raghavachari K. Appl. Phys. Lett. 56:1990;656.
21. Sakaue H., Fujiwara S., Shingubara S., Takahagi T. Appl. Phys. Lett. 78:2001;309.
22. Lui E., Blanpain B., Celis J.P. Wear. 192:1996;141.
23. Attard P., Carrambassis A., Rutland M.W. Langmuir. 15:1999;553.
24. Kern W. Handbook of Semiconductor Wafer Cleaning Technology. 1993;Noyes Publications, Park Ridge, NJ.
25. Yasaka T., Kanda K., Sawara K., Miyazaki S., Hirose M. Jpn. J. Appl. Phys. 30:1991;3567.
26. Sunada T., Yasaka T., Takakura M., Sugiyama T., Miyazaki S., Hirose M. Jpn. J. Appl. Phys. 29:1990;L2408.
27. Flidr J., Huang Y.-C., Hines M. J. Chem. Phys. 111:1999;6970.