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Volumn 111, Issue 15, 1999, Pages 6970-6981

An atomistic mechanism for the production of two- and three-dimensional etch hillocks on Si(111) surfaces

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Indexed keywords


EID: 0001017962     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.479990     Document Type: Article
Times cited : (52)

References (45)
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    • note
    • -7:∝:∞}.
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    • bnt=0.1. 23 The movies can be viewed at the Hines group web site in Cornell Chemistry. The current address is
    • bnt=0.1. 23 The movies can be viewed at the Hines group web site in Cornell Chemistry. The current address is 〈http://www.chem.cornell.edu/∼mah11/ Hillock.html〉.
  • 27
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    • note
    • Since our simulations have circular bounds, this could be avoided; however, we have tried to make our analysis equally applicable to experiment and simulation.
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    • note
    • This avoids the effects of step-step collisions.
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    • Ph. D. dissertation Cornell University Press, Ithaca
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    • note
    • This is a result of the "no undercutting" assumption.
  • 35
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    • note
    • This result is independant of the included angle, assuming L is much longer than the saw tooth wavelength.
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    • In the absence of long-range strain fields, the equilibrium morphology is governed by entropic repulsion between the steps. B. Joós, T. L. Einstein, and N. C. Bartelt, Phys. Rev. B 43, 8153 (1991); T. L. Einstein and O. Pierre-Louis, Surf. Sci. 424, L249 (1999).
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    • In the absence of long-range strain fields, the equilibrium morphology is governed by entropic repulsion between the steps. B. Joós, T. L. Einstein, and N. C. Bartelt, Phys. Rev. B 43, 8153 (1991); T. L. Einstein and O. Pierre-Louis, Surf. Sci. 424, L249 (1999).
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    • edited by J. C. Bailar, Jr., H. J. Emeléus, and R. Nyholm Pergamon, Oxford
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    • edited by G. Wilkinson Pergamon, Oxford
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    • note
    • This point is discussed much more fully in Ref. 35.


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