Quantitative analysis of oxide voltage and field dependence of time-dependent dielectric soft breakdown and hard breakdown in ultrathin gate oxides

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2426-2430

  Mizubayashi, Wataru ^a   Yoshida, Yuichi ^a   Miyazaki, Seiichi ^a   Hirose, Masataka ^b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Dielectric soft breakdown; Field acceleration parameter; Hard breakdown; Soft breakdown; Time dependent; Ultrathin gate oxides

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC FIELD EFFECTS; STRESS ANALYSIS;

DIELECTRIC SOFT BREAKDOWN; FIELD ACCELERATION PARAMETER; SOFT BREAKDOWN; ULTRATHIN GATE OXIDES;

GATES (TRANSISTOR);

EID: 1942512607     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2426     Document Type: Article

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