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Journal of Non-Crystalline Solids

Volumn 299-302, Issue , 2002, Pages 556-560

Nature of metastable and stable dangling bond defects in hydrogenated amorphous silicon

(3) Powell, M J a Wehrspohn, R B b Deane, S C a

a PHILIPS RESEARCH LABORATORIES (Netherlands)

b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CHARGE CARRIERS; CHEMICAL BONDS; CRYSTAL DEFECTS; HYDROGENATION; MATHEMATICAL MODELS; STABILITY;

CARRIER LOCALIZATION;

AMORPHOUS SILICON;

EID: 0036540307 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(01)00965-6 Document Type: Article

Times cited : (20)

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