Low-noise cryogenic X-band amplifier using wet-etched hydrogen passivated InP HEMT devices

IEEE Microwave and Guided Wave Letters

Volumn 9, Issue 10, 1999, Pages 413-415

  López Fernández, Isaac ^a   Gallego Puyol, Juan Daniel ^a   Homan, Otte J ^b   Cancio, Alberto Barcia ^a  

^a Centro Astronomico de Yebes   (Spain)

^b ETH ZURICH   (Switzerland)

Author keywords

Cryogenic amplifier; HFET; High electron mobility transistor (HEMT); InP; Low noise; VLBI

Indexed keywords

EID: 0005876088     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.798033     Document Type: Article

References (13)

1. R. D. Norrod, G. H. Behrens, F. D. Ghigo, and B. J. Levin, "Design and implementation of a low-noise prime focus S/X receiver system for radio astronomy," Proc. IEEE, vol. 82, pp. 768-775, May 1994.
2. S. Weinreb, M. W. Pospieszalski, and R. Norrod, "Cryogenic HEMT low noise receivers for 1.3 to 43 GHz range," in Proc. 1988 IEEE MTT-S Int. Microwave Symp. Dig., p. 945.
3. M. W. Pospieszalski, W. J. Lakatosh, R. Lai, K. L. Tan, D. C. Streit, P. H. Liu, R. M. Dia, and J. Velebir, "Millimeter-wave, cryogenically coolable amplifiers using AlInAs/GaInAs/InP HEMT'S," in Proc. 1993 IEEE MTT-S Int. Microwave. Symp. Dig., pp. 515-518.
4. R. Lai, J. J. Bautista, B. Fujiwara, K. L. Tan, G. I. Ng, R. M. Dia, D. Streit, P. H. Liu, A. Freudenthal, J. Laskar, and M. W. Pospieszalski, "An ultra-low noise cryogenic Ka-band InGaAs/InAlAs/InP HEMT front-end receiver," IEEE Microwave Guided Wave Lett., vol. 4, pp. 329-331, Oct. 1994.
5. M. W. Pospieszalski, W. J. Lakatosh, and E. Woollak, "Millimeter-wave, waveguide-bandwidth cryogenically-coolable InP HEMT amplifiers," in Proc. 1997 IEEE MTT-S Int. Microwave. Symp. Dig., pp. 1285-1288.
6. S. Padin, D. P. Woody, J. A. Stern, H. G. LeDuc, R. Blundell, C. Y. E. Tong, and M. W. Pospieszalski, "An integrated SIS mixer and HEMT IF amplifier," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 987-990, June 1996.
7. H. C. Duran, B. U. H. Klepser, and W. Bächtold, "Low-noise properties of dry gate recess etched InP HEMT's," IEEE Electron Device Lett., vol. 17, pp. 482-484, Oct. 1996.
8. H. C. Duran, L. Ren, M. Beck, M. A. Py, M. Ilegems, and W. Bächtold, "Low frequency noise properties of selectively dry etched InP HEMT's," IEEE Trans. Electron Devices, vol. ED-45, pp. 1219-1225, June 1998.
9. H. C. Duran, "High performance InP-based HEMT's with dry etched gate recess," Ph.D. dissertation, ETH Zürich (Series in Microelectronics), 1999, vol. 78.
10. R. B. Marks, "A multiline method of network analyzer calibration," IEEE Trans. Microwave Theory Tech., vol. 39, pp. 1205-1215, July 1991.
11. M. W. Pospieszalski, "Modeling of noise parameters of MESFET'S and MODFET'S and their frequency and temperature dependence," IEEE Trans. Microwave Theory Tech., vol. 37, pp. 1340-1350, Sept. 1989.
12. M. W. Pospieszalski, L. D. Nguyen, M. Lui, T. Liu, M. A. Thompson, and M. J. Delaney, "Very low noise and low power operation of cryogenic AlInAs/GaInAs/InP HFET's," in Proc. IEEE MTT-S Int. Microwave. Symp. Dig., 1994, pp. 1345-1346.
13. J. D. Gallego and M. W. Pospieszalski, "Design and performance of cryogenically coolable ultra low noise, L-Band amplifier," in Proc. 20th European Microwave Conf., Budapest, Hungary, Sept. 1990, pp. 1755-1760.