Generation-recombination noise in MOSFETs

Semiconductor Science and Technology

Volumn 14, Issue 3, 1999, Pages 298-304

  Jamal Deen, M ^a   Levinshtein, M E ^b   Rumyantsev, S L ^b   Orchard Webb, J ^c  

^a SIMON FRASER UNIVERSITY   (Canada)

^b IOFFE INSTITUTE   (Russian Federation)

^c Mitel Telecomms   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; MATHEMATICAL MODELS; SPURIOUS SIGNAL NOISE;

CONDUCTION BAND; DEEP LEVEL; VALENCE BAND;

MOSFET DEVICES;

EID: 0342460899     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/3/016     Document Type: Article

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