Deep level investigation in AlGaAs/InGaAs/GaAs cryoelectronic MODFET

Solid-State Electronics

Volumn 45, Issue 7, 2001, Pages 1059-1065

  Dermoul, I ^a   Chekir, F ^a   Ben Salem, M ^a   Kalboussi, A ^a   Maaref, H ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

Cryoelectronic; Deep level; DLTS; MODFET

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

FIELD EFFECT TRANSISTORS;

EID: 0035390019     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00147-2     Document Type: Article

References (15)

1. Inst phys conf ser no. 12