CRyogenic Indium-Phosphide HEMT low-noise amplifiers at v-band

IEEE Transactions on Microwave Theory and Techniques

Volumn 48, Issue 7 PART 2, 2000, Pages 1283-1286

  Tanskanen, J M ^a   Kangaslahti, P ^a   Ahtola, H ^b   Jukkala, P ^b   Karttaavi, T ^b   Lahdes, M ^b  

^a Ylinen Electronics Ltd   (Finland)

^b VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

Cryogenic cooling; Indium phosphide; LNA; V band

Indexed keywords

LOW NOISE AMPLIFIERS; V-BAND;

COMPUTER SIMULATION; CRYOGENICS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MILLIMETER WAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SCATTERING PARAMETERS; SEMICONDUCTING INDIUM PHOSPHIDE; SIGNAL NOISE MEASUREMENT; WAVEGUIDES;

MICROWAVE AMPLIFIERS;

EID: 0034228245     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.853474     Document Type: Article

References (7)

1. M. Lahdes and J. Tuovinen, "V-band on-wafer noise parameter measurements," in GaAs'98 Dig., Amsterdam, The Netherlands, 5-6, pp. 394.
2. M. W. Pospieszalski, "Modeling of noise parameters of MESFET's and MODFET's and their frequency and temperature dependence," IEEE Trans. Microwave Theory Tech.. vol. 37, pp. 1340-1350, Sept. 1989.
3. T. Sporkmann, "The current state of the art in coplanar MMICs," Microwave J., pp. 60-74, Aug. 1998.
4. S. Weinreb, R. Lai, N. Erickson, T. Gaier, and J. Wielgus, "W-band InP wide-band MMIC ENA with 30-K noise temperature," in IEEE MTT-S Int. Microwave Symp. Dig., 1999, pp. 101-104.
5. K. H. G. Duh, M. W. Pospieszalski, W. F. Kopp, P. Ho, A. A. Jabra, P. Chao, P. M. Smith, E. F. Eester, J. M. Ballingall, and S. Weinreb, "Ultra-low-noise cryogenic high-electron-mobility transistors," IEEE Trans. Electron Devices, vol. 35, pp. 249-256, Mar. 1988.
6. H. Wang, D. C.-W. Eo, R. Eai, C.-C. Yang, and J. Berenz, "Cryogenically cooled performance of a monolithic 44-GHz InP-based HEMT low-noise amplifier," IEEE Microwave Guided Wave Lett., vol. 5, pp. 281-283, Sept. 1995.
7. A. Sylvestre, "Cryogenic investigation of gate leakage and RF performances down to 50 K of 0.2 //m AlInAs/GalnAs/InP HEMTs," Electron. Lett., vol. 20, no. 24, pp. 2152-2154, Nov. 1993.