A study of the failure mechanism of a titanium nitride diffusion barrier

Journal of Applied Physics

Volumn 86, Issue 6, 1999, Pages 3096-3103

  Lee, Hoo Jeong ^a   Sinclair, Robert ^a   Li, Pamela ^b   Roberts, Bruce ^b  

^a Stanford University   (United States)

^b NOVELLUS SYSTEMS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007983631     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371173     Document Type: Article

References (28)

1. M. Hansen and A. Anderko, Constitution of Binary Alloys (McGraw-Hill, New York, 1958).
2. J. O. McCaldin and H. Sankur, Appl. Phys. 19, 524 (1971).
3. J. M. Poate, K. N. Tu, and J. W. Mayer, Thin Films Interdiffusion and Reactions (Electrochemical Society, Princeton, NJ, 1978).
4. D. Pramanik and A. N. Saxena, Solid State Technol. 26, 127 (1983).
5. M.-A. Nicolet, Thin Solid Films 52, 415 (1978).
6. M. Wittmer, J. Appl. Phys. 53, 1007 (1982).
7. R. Beyers, R. Sinclair, and M. E. Thomas, J. Vac. Sci. Technol. B 2, 781 (1984).
8. A. Armiglíato and G. Valdre, J. Appl. Phys. 61, 390 (1987).
9. M. Kotte, R. Gregory, F. Pintchovski, E. Travis, and P. J. Tobin, J. Vac. Sci. Technol. B 9, 74 (1991).
10. I. Suni, M. Biomberg, and J. Saarilahti, J. Vac. Sci. Technol. A 3, 2233 (1985).
11. G. I. Grigorov, K. G. Grigorov, M. Stoyanova, J. L. Vignes, J. P. Langeron, and P. Denjean, Appl. Phys. A: Solids Surf. 57, 195 (1993).
12. S. O. Hyatt, B. S. Chao, and H. Yamauchi, Vacuum 44, 1025 (1993).
13. I. Suni, M. Maenpaa, M. A. Nicolet, and M. Luomajarvi, J. Electrochem. Soc. 130, 1215 (1983).
14. M. Mändl and H. Hoffmann, J. Appl. Phys. 68, 2127 (1990).
15. M. Okihara, N. Hirashita, K. Hashimoto, and H. Onoda, Appl. Phys. Lett. 66, 1328 (1995).
16. S. Sobue, S. Mukainakano, Y. Ueno, and T. Hattori, Jpn. J. Appl. Phys., Part 1 34, 987 (1995).
17. D. B. Williams, Practical Analytical Electron Microscopy in Material Science (Philips Electronic Instruments, Electron Optics Pub. Group, Mahwah, NJ, 1984), p. 77.
18. D. B. Williams, J. R. Michael, J. I. Goldstein, and A. D. Romig, Jr., Ultramicroscopy 47, 121 (1992).
19. T. Itoh, T. J. Konno, I. Raaijmakers, B. Roberts, and R. Sinclair, in Advanced Metallization for Devices and Circuits-Science, Technology, and Manufacturability, edited by S. P. Muraka, K. N. Tu, A. Katz, and K. Maex (Materials Research Society, Pittsburgh, PA, 1994), p. 735.
20. H.-J. Lee, P. Li, B. Roberts, and R. Sinclair, in Materials Reliability in Microelectronics VI, edited by W. Filter, J. J. Clement, A. S. Oates, R. Rosenberg, and P. M. Lenahan (Materials Research Society, Pittsburgh, PA, 1996), p. 295.
21. L. Hultman, S. Benhenda, G. Radnocz, J.-E. Sundgren, J. E. Greene, and I. Petrov, Thin Solid Films 215, 152 (1992).
22. R. Beyers, in Thin Films: The Relationship of Structure of Properties, edited by C. R. Aita and K. S. Sree Harsha (Material Research Society, Pittsburgh, PA, 1996), p. 143.
23. R. Beyers, J. Appl. Phys. 56, 147 (1984).
24. C. Y. Ting and M. Wittmer, J. Appl. Phys. 54, 937 (1983).
25. A. Raman and K. Schubert, Z. Metallkd. 56, 44 (1965).
26. H. Nishimura, T. Yamada, R. Sinclair, and S. Ogawa, VLSI Technical Digest (1992), p. 74.
27. P. Villars, A. Prince, and H. Okamoto, Handbook of Ternary Alloy Phase Diagrams (ASM International, Materials Park, OH, 1995), Vol. 7, p. 310.
28. A. S. Bhansali, Ph.D. thesis, Stanford University, 1992, p. 49.