Chemical and structural aspects of annealed ZnSe/GaAs(001) heterostructures

Journal of Applied Physics

Volumn 92, Issue 7, 2002, Pages 3569-3572

  Mosca, D H ^a   Schreiner, W H ^a   Kakuno, E M ^a   Mazzaro, I ^a   Silveira, E ^a   Etgens, V H ^b   Eddrief, M ^b   Zanelatto, G ^c   Galzerani, J C ^c  

^a FEDERAL UNIVERSITY OF PARANÁ   (Brazil)

^b UNIVERSITÉ PIERRE ET MARIE CURIE   (France)

^c FEDERAL UNIVERSITY OF SÃO CARLOS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CAP LAYERS; GAAS SUBSTRATES; GAAS(001); HIGH RESOLUTION X RAY DIFFRACTION; SEQUENTIAL ANNEALING; STRUCTURAL ASPECTS; THERMAL EVOLUTION; ZN ATOMS;

EPITAXIAL GROWTH; GALLIUM; GALLIUM ARSENIDE; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; RAMAN SPECTROSCOPY; X RAY DIFFRACTION;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 18644385339     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1504175     Document Type: Article

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